Analytical Quantum Drain Current Model in Undoped Cylindrical Surrounding-Gate MOSFETS

Fatimah A. Noor, Christoforus Bimo, Khairurrijal Khairurrijal


Analytical potential model for cylindrical surrounding-gate or gate-all-around metal oxide semiconductor field effect transistors (MOSFETs) has been developed. The model presented here takes quantum confinement effects into account in which embodied by two physical parameters, namely, (1) threshold voltage shift and (2) inversion layer centroid. These parameters have been incorporated into the classical procedure as modifications for the gate work function and the inversion layer capacitance to obtain the quantum version of drain current. The model has been able to reproduce drain current vs. gate voltage characteristics obtained from self-consistent calculation. Therefore, it is suitable to use it in the context of circuit simulator.


Analytical Model; Cylindrical Surrounding Gate MOSFETs;

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Roldan, J. B., Gamiz F., Jimenez-Molinos F., Sampedro C., Godoy A., Garcia Ruiz F. J., and Rodriguez N. 2010. An Analytical I-V Model for Surrounding-Gate Transistor That Includes Quantum and Velocity Overshoot Effects. IEEE Trans. Electron Devices. 57(11): 2925-2933

Iniguez B., Jimenez D., Roig J., Hamid H. A., Marsal L. F., and Pallares J., 2005. Explicit Continuous Model for Long-Channel Undoped Surrounding Gate MOSFETs. IEEE Trans. Electron Devices. 52(8): 1868-1873

Wang W., Lu H., Song J., Lo S.-H., and Taur Y. 2010, Compact Modeling of Quantum Effects in Symmetric Duble-Gate MOSFETs. Microelectr. J. 41(10): 688-692

Taur Y., Liang X., Wang W., and Lu H. 2004. A Continous, Analytic Drain-Current Model for DG MOSFETs. IEEE Electron Device Lett. 25(2): 107-109

Jimenez D., Iniguez B., Su J., Marsal L. F., Pallars J., Roig J., and Flores D. 2004. Continuous Analytic I-V Modeling for SurroundingGate MOSFETs. IEEE Electron Device Lett. 25(7): 571-73

Yu B., Lu H., Liu M., and Taur Y. 2007. Explicit Continuous Models

for Double-Gate and Surrounding-Gate MOSFETs IEEE Trans. Electron Devices. 54(10): 2715-2722

Yu B., Lu W.-Y., Lu H., and Taur Y., 2007. Analytic Charge Model

for Surrounding-Gate MOSFETs. IEEE Trans. Electron Devices. 54(3): 492-496

Cheng, H., Uno, S., and Nakazato, K., 2015. Analytic Compact Model of Ballistic and Quasi-Ballistic Transport for Cylindrical Gate AllAround MOSFET Including Drain-Induced Barrier Lowering Effect. J. Comput. Electron. 14:321-328

Moreno, E., Villada, M. P., Ruiz, F. G., Roldan, J. B., Marin, E. G. 2015. A New Explicit and Analytical Model for Square Gate AllAround with Rounded Corners. Solid State Electron. 111:180-187

Xiao, Y., Zhang, B., Lou, H., Zhang, L., and Lin, X. 2016. A Compact Model of Subthreshold Current with Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs. IEEE Trans. Electron Devices. 99:1-6

Pao H. C. and Sah C. T. 1966. Effect of Diffusion Current on Characteristics of Metal-Oxide (Insulator)-Semiconductor Transistor. Solid-State Electron. 9: 927-937

Bimo C., Noor F. A., and Khairurrijal, A Compact Modeling of Quantum Effects in Undoped Long-Channel Cylindrical Surrounding-Gate MOSFETs, in Asian Physics Symposium 2015.


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ISSN: 2180-1843

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