Ngelayang, T.B., Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
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Vol 10, No 2-7: Embracing The 4th Industrial Revolution: Innovation in Telecommunication, Electronic & Computer Engineering III - Articles
The Impact of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETs for Low Power Device
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