An X-band MMIC Low Noise Amplifier Design with In0.7Ga0.3As/In0.52Al0.48As pHEMT

W. M. Jubadi, K. W. Ian, M. Missous, N. Zainal

Abstract


A low noise amplifier (LNA) design operating at Xband frequency range of 8 – 12 GHz using 0.25 µm In0.7Ga0.3As/In0.52Al0.48As pHEMT is presented. The target specifications of the MMIC LNA design are then addressed, the performance constraints and compromises that arise in the design of circuit topologies, biasing networks and matching configurations are also discussed. The design and analysis of the single input single-ended output, single and double stage LNAs are presented using all of the criteria. The simulations setup successfully showed an X-band LNAs are designed to match a 50 Ω input and output impedance. The proposed design is an MMIC LNA that combines high performance with low cost and avoids expensive external components.

Keywords


InGaAs/InAlAs pHEMT; Low Noise Amplifier; MMIC; X-band;

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